ECS4365

Advanced electron and photon devices

Not offered in 1998

L N Binh

4 points
* 24 lectures, 9 tutorials and 9 laboratory classes
* Second semester
* Clayton
* Prerequisites: ECS2360

Objectives The student is expected to acquire advanced knowledge of the physical behaviour of semiconductor junctions for electron tunnelling and photon generation and to develop the ability to analyse and design optoelectronic and photonic devices using such junctions.

Synopsis Advanced semiconductor junctions: pnpn junctions, metal-semiconductor junctions, super-conductor junctions, MOS structures, heterojunctions, quantum well structures. Electron devices: triacs, GTO devices, Schottky diodes, SQUIDs. Photon devices: Fabry-Perot injection laser diodes, distributed feedback laser diodes, optical fibre amplifiers, quantum well lasers.

Assessment Project work and laboratory work: 100%